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DB3 Diodes Used for Controllable Silicon Electric Circuits, Solid-State Relays and More

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Country of Origin:

  • China (mainland)

Key Specifications/Special Features:

  • DIAC sets
  • For general-purpose applications
  • DB3:
    • Breakover voltage (V):
      Min: 28
      Typ: 32
      Max: 36
    • Breakover voltage: 3 (max)
    • Dynamic breakback voltage (V): 5 (min)
    • Breakover current (uA): 100 (max)
    • Peak pulse current for 10us 120 PPS TA< / =40 degrees Celsius: peak pulse current: 2.0A (max)
  • DB4:
    • Breakover voltage (V):
      Min: 35
      Typ: 40
      Max: 45
    • Breakover voltage: 4 (max)
    • Dynamic breakback voltage (V): 5 (min)
    • Breakover current (uA): 100 (max)
    • Peak pulse current for 10us 120 PPS TA< / =40 degrees Celsius: peak pulse current 2.0A (max)
  • DB6:
    • Breakover voltage (V):
      Min: 56
      Typ: 60
      Max: 70
    • Breakover voltage: 5 (max)
    • Dynamic breakback voltage (V): 10 (min)
    • Breakover current (uA): 100 (max)
    • Peak pulse current for 10us 120 PPS TA< / =40 degrees Celsius: peak pulse current 2.0A (max)
  • Special Characteristics:
    • Glass-passivated three-layer for triggering thyristors
    • Low breakover current at breakover voltage
    • For use in thyristor phase-control circuir for lamp dimming,universal-motor speed control and heat control

Primary Competitive Advantages:

  • Experienced Technical Staff
  • Electronic Link
  • Product Performance
  • Prompt Delivery
  • Competitive
  • Stock In Hand
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